The department warmly welcomed Mr. Joseph Ke Kian Seng for a seminar on Infineon Technologies and Wide Band Gap Semiconductors. Mr. Joseph Ke, the Lead Principal Engineer at Infineon Technologies (Kulim) Sdn Bhd, brings over 25 years of experience in the semiconductor industry. He holds a Bachelor of Science in Electrical & Electronic Engineering from the University of Mississippi, USA, and a Master of Science in Engineering. His expertise spans Process Integration and Technology Development in Power MOSFET and IC technologies, including CMOS, DMOS, BCD, and SOI. Currently, he focuses on Gallium Nitride (GaN) Technologies.
Mr. Joseph Ke introduced Infineon, highlighting its global presence with manufacturing plants in 133 locations and its leadership in power semiconductors. In Malaysia, Infineon employs over 16,000 skilled workers across Kulim, Penang, and Malacca. The company recently completed the Kulim 3 plant, a 200-millimeter SiC power semiconductor fab.
The industry trend towards energy efficiency is a key focus for Infineon, which produces energy-efficient solutions and products using silicon, silicon carbide, and gallium nitride to meet customer needs. Wide band gap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), are particularly noteworthy due to their superior properties compared to traditional silicon-based semiconductors.
Silicon carbide and gallium nitride have wider band gaps, which allow them to operate at higher voltages, temperatures, and frequencies. This results in lower energy losses and higher efficiency, making them ideal for applications in power electronics. For instance, SiC is commonly used in electric vehicles and renewable energy systems due to its ability to handle high power levels and improve overall system efficiency. GaN, on the other hand, is favored in high-frequency applications such as radio frequency (RF) amplifiers and power supplies, where its high electron mobility and thermal conductivity offer significant performance advantages.
Infineon’s commitment to advancing these technologies is evident in their recent completion of the Kulim 3 plant, a 200-millimeter SiC power semiconductor fab. This facility enhances their capacity to produce cutting-edge SiC devices, further solidifying their position as a leader in the power semiconductor market. By leveraging the unique benefits of wide band gap semiconductors, Infineon continues to drive innovation and support the global shift towards more sustainable and energy-efficient solutions.
